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Fujitsu Develops World's First Gallium-Nitride HEMT for Power Supply
Published July 7, 2009, 8:23 pm, Japan Corporate News
Tokyo, June 24, 2009 - (JCN Newswire) - Fujitsu Laboratories Ltd. today announced the development of a new structure for gallium-nitride high electron-mobility transistors (GaN)(1)(HEMT)(2) that can minimize power loss in power supplies, thus enabling reduced power consumption of electronic equipment such as IT hardware and home electronics.
Bright, efficient LEDs taking bulb limelight
Published July 3, 2009, 4:43 am, Honolulu Star-Bulletin
The hottest lights on the market today are cool light-emitting diodes, or LEDs.
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